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NCV8403, NCV8403A
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Clamped Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
(V GS = 0 Vdc, I D = 250 m Adc, T J = ? 40 ° C to 150 ° C) (Note 3)
Zero Gate Voltage Drain Current
(V DS = 32 Vdc, V GS = 0 Vdc)
(V DS = 32 Vdc, V GS = 0 Vdc, T J = 150 ° C) (Note 3)
Gate Input Current
(V GS = 5.0 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
42
40
?
?
?
46
45
0.6
2.5
50
51
51
5.0
?
125
Vdc
Vdc
m Adc
m Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 4)
(V GS = 10 Vdc, I D = 3.0 Adc, T J @ 25 ° C)
(V GS = 10 Vdc, I D = 3.0 Adc, T J @ 150 ° C) (Note 3)
Static Drain ? to ? Source On ? Resistance (Note 4)
(V GS = 5.0 Vdc, I D = 3.0 Adc, T J @ 25 ° C)
(V GS = 5.0 Vdc, I D = 3.0 Adc, T J @ 150 ° C) (Note 3)
Source ? Drain Forward On Voltage
(I S = 7.0 A, V GS = 0 V)
V GS(th)
R DS(on)
R DS(on)
V SD
1.0
?
?
?
?
?
?
1.7
5.0
53
95
63
105
0.95
2.2
?
68
123
76
135
1.1
Vdc
mV/ ° C
m W
m W
V
SWITCHING CHARACTERISTICS (Note 3)
Turn ? ON Time (10% V IN to 90% I D )
Turn ? OFF Time (90% V IN to 10% I D )
Turn ? ON Time (10% V IN to 90% I D )
Turn ? OFF Time (90% V IN to 10% I D )
Slew ? Rate ON (20% V DS to 50% V DS )
Slew ? Rate OFF (80% V DS to 50% V DS )
V IN = 0 V to 5 V, V DD = 25 V
I D = 1.0 A, Ext R G = 2.5 W
V IN = 0 V to 10 V, V DD = 25 V ,
I D = 1.0 A, Ext R G = 2.5 W
V in = 0 to 10 V, V DD = 12 V,
R L = 4.7 W
t ON
t OFF
t ON
t OFF
? dV DS /dt ON
dV DS /dt OFF
44
84
15
116
2.43
0.83
m s
V /m s
SELF PROTECTION CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (Note 5)
Current Limit
Current Limit
Temperature Limit (Turn ? off)
Thermal Hysteresis
Temperature Limit (Turn ? off)
Thermal Hysteresis
V GS = 5.0 V, V DS = 10 V
V GS = 5.0 V, T J = 150 ° C (Note 3)
V GS = 10 V, V DS = 10 V
V GS = 10 V, T J = 150 ° C (Note 3)
V GS = 5.0 Vdc (Note 3)
V GS = 5.0 Vdc
V GS = 10 Vdc (Note 3)
V GS = 10 Vdc
I LIM
I LIM
T LIM(off)
D T LIM(on)
T LIM(off)
D T LIM(on)
10
5.0
12
8.0
150
?
150
?
15
10
17
13
175
15
165
15
20
15
22
18
200
?
185
?
Adc
Adc
° C
° C
° C
° C
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current
V GS = 5 V I D = 1.0 A
I GON
50
m A
V GS = 10 V I D = 1.0 A
400
Current Limit Gate Input Current
V GS = 5 V, V DS = 10 V
I GCL
0.1
mA
V GS = 10 V, V DS = 10 V
0.6
Thermal Limit Fault Gate Input Current
V GS = 5 V, V DS = 10 V
I GTL
0.45
mA
V GS = 10 V, V DS = 10 V
ESD ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (Note 3)
1.5
Electro ? Static Discharge Capability
Electro ? Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
ESD
4000
400
?
?
?
?
V
V
3. Not subject to production testing.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
http://onsemi.com
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